silicon multi-epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9199 issue 1 page 1 of 3 2N6678M3A high voltage, fast switching. hermetic to-254aa isolated metal package. ideally suited for pwm regulators, power supplies and converter circuits screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 650v v cex collector ? emitter voltage v be = -1.5v 650v v ceo collector ? emitter voltage 400v v ebo emitter ? base voltage 8v i c continuous collector current 15a i b base current 5a p d total power dissipation at t a = 25c 6w derate above 25c 34.3mw/c p d total power dissipation at t c = 25c 175w derate above 25c 1.0w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters max. units r ja thermal resistance, junction to ambient 29.16 c/w r jc thermal resistance, junction to case 1.0 c/w
silicon multi-epitaxial npn transistor 2N6678M3A semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9199 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 20ma 400 v v ce = 400v v be = -1.5v 500 na v ce = 650v v be = -1.5v 1.0 i cex collector cut-off current t a = 125c 50 a i cbo collector cut-off current v cb = 650v i e = 0 1.0 i ebo emitter cut-off current v eb = 8v i c = 0 2 ma i c = 15a i b = 3a 1.0 v ce(sat) (1) collector-emitter saturation voltage t a = 125c 2 v be(sat) (1) base-emitter saturation voltage i c = 15a i b = 3a 1.5 v i c = 1.0a v ce = 3v 15 40 i c = 15a v ce = 3v 8 20 h fe (1) forward-current transfer ratio ` t a = -55c 4 dynamic characteristics i c = 1.0a v ce = 10v | h fe | small signal forward-current transfer ratio f = 5mhz 3 10 v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 150 500 pf t d delay time i c = 15a v cc = 200v 0.1 t r rise time i b1 = 3a 0.6 t s storage time i c = 15a v cc = 200v 2.5 t f fall time i b1 = -i b2 = 3a 0.5 s notes notes notes notes (1) pulse width 300us, 2%
silicon multi-epitaxial npn transistor 2N6678M3A semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9199 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to - 2 54 a a pin 1 - base pin 2 - collector pin 3 - emitter 1 2 3 13.59 (0.535)13.84 (0.545) 3.53 (0.139)3.78 (0.149) dia. 6.32 (0.249)6.60 (0.260) 1.02 (0.040)1.27 (0.050) 30 . 35 ( 1 . 195 ) 31 . 40 ( 1 . 235 ) 16 . 89 ( 0 . 665 ) 17 . 40 ( 0 . 685 ) 13 . 59 ( 0 . 535 ) 13 . 84 ( 0 . 545 ) 20 . 07 ( 0 . 790 ) 20 . 32 ( 0 . 800 ) 3.81 (0.150) bsc 0.89 (0.035)1.14 (0.045) 3.81 (0.150) bsc
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